On Approach to Increase Integration Rate of Elements of an Operational Amplifier Circuit

E. L. Pankratov

doi:10.13189/mst.2019.060101

Abstract

In this paper we introduce an approach to increase integration rate of elements of an integrator operational amplifier. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

Highlights

An actual and intensively solving problems of solid state electronics is increasing of integration rate of elements of integrated circuits (p-n-junctions, their systems et al) [1,2,3,4,5,6,7,8]
Increasing of the integration rate leads to necessity to decrease their dimensions
Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature. In this situation one can obtain decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law [1, 3]. Another approach to manufacture elements of integrated circuits with smaller dimensions is doping of heterostructure by diffusion or ion implantation [1,2,3]

Summary

Introduction

An actual and intensively solving problems of solid state electronics is increasing of integration rate of elements of integrated circuits (p-n-junctions, their systems et al) [1,2,3,4,5,6,7,8]. Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature. In this situation one can obtain decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law [1, 3]. Another approach to manufacture elements of integrated circuits with smaller dimensions is doping of heterostructure by diffusion or ion implantation [1,2,3] In this case optimization of dopant and/or radiation defects is required [18].

Method of Solution

Discussion

Substrate

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