Abstract
In this paper we introduce an approach to increase integration rate of elements of a cascaded-inverter. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
Highlights
An actual and intensively solving problems of solid state electronics is increasing of integration rate of elements of integrated circuits (p-n-junctions, their systems et al) [1,2,3,4,5,6,7,8]
Increasing of the integration rate leads to necessity to decrease their dimensions
Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature. In this situation one can obtain decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law [1,3]. Another approach to manufacture elements of integrated circuits with smaller dimensions is doping of heterostructure by diffusion or ion implantation [1,2,3]
Summary
An actual and intensively solving problems of solid state electronics is increasing of integration rate of elements of integrated circuits (p-n-junctions, their systems et al) [1,2,3,4,5,6,7,8]. Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature In this situation one can obtain decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law [1,3]. Another approach to manufacture elements of integrated circuits with smaller dimensions is doping of heterostructure by diffusion or ion implantation [1,2,3] In this case optimization of dopant and/or radiation defects is required [18]. Optimization of annealing leads to manufacturing of more compact elements of integrated circuits and at the same time to increase of homogeneity of dopant distribution in doped area (in this situation one can find decreasing of local overheats during functioning of devices). At the same time analytical approaches are more visible in comparison with numerical one
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
