Abstract
In this paper, the Photoluminescence intensity of Zinc oxide compound semiconductor in conduction band to valence band, ICV , conduction band to localized trap centre, ICT and localized trap centre to valence band, IT V radiative recombination mechanisms are discussed in different temperatures. By varying temperature, the dominated radiative recombination mechanisms are studied from the three radiative recombination mechanisms. At high values of temperature, the intensity of light in band-to-band radiative recombination mechanism dominates for all values of energies. For high values of impurity trap density, only the intensity of light in conduction band to trap level radiative recombination mechanisms dominates for all energies.
Highlights
The beginning of semiconductor research is marked by Faraday’s 1833 report on negative temperature coefficient of resistance of Silver sulfide
The presence of defects in a semiconductor crystal due to impurities or crystallographic imperfections such as dislocations produces discrete energy levels within the band-gap. These defect levels, known as traps, greatly facilitate recombination through a twostep process where a free electron from the conduction band first relaxes to the defect level and relaxes to the valence band where it annihilates a hole [10]
R = CCV np where CCV is a constant known as the coefficient of holes in the valence band for the capture of electrons from the conduction band
Summary
The beginning of semiconductor research is marked by Faraday’s 1833 report on negative temperature coefficient of resistance of Silver sulfide. The presence of defects in a semiconductor crystal due to impurities or crystallographic imperfections such as dislocations produces discrete energy levels within the band-gap These defect levels, known as traps, greatly facilitate recombination through a twostep process where a free electron from the conduction band first relaxes to the defect level and relaxes to the valence band where it annihilates a hole [10]. By substituting the typical values for energy band gap, capture coefficients, acceptor energy levels and carrier’s concentrations of the zinc oxide semiconductor, the photoluminescence intensity of radiative recombination mechanism at different temperature is determined for both localized state and transition energies
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