Abstract
The temperature dependence of very-short-pulse-induced dynamic latchup in CMOS is studied over a temperature range of 77–400 K through two-dimensional device simulation with fulltemperature models. When the trigger-pulse duration decreases below 10 ns the temperature dependence of latchup immunity comes to disagree with the results of previous other studies, showing that latchup immunity increases with decreasing temperature. For very short pulses latchup immunity decreases monotonously or has its local maximum value at about 120 K and then decreases as the temperature decreases. Pulse-induced dynamic latchup sensitivity at 77 K exceeds that at 300 K when the pulse duration becomes shorter than a certain very small value. This temperature dependence mechanism of very-short-pulse-induced latchup is discussed in detail.
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