Abstract
An insightful study of static and dynamic latchup in the LIGBT, based on extensive two-dimensional numerical device simulations, is described. The insight is then used as a basis for developing a physical SPICE LIGBT model, which is useful for device simulation and design (e.g. for latchup immunity) as well as for power integrated circuit simulation. The basic mechanisms underlying latchup in the LIGBT are identified for various excitations. The significance of the effective p-i-n diode that materializes via the conductivity modulation in the regenerative process is stressed in the simulations, as is the importance of non-quasi-static bipolar transistor behavior, heretofore unrecognized. the SPICE model is supported by measurements of test devices and by the numerical device simulations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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