Abstract
The deformation properties of the surface roughening associated with the strain relaxation process have been studied in a set of In x Ga 1− x As single layers (0.10≤ x≤0.50) grown by different epitaxial techniques on GaAs and InP substrates. Raman spectroscopy performed on samples showing a rough surface reveals that, as the probing depth is reduced, a shift of the GaAs-like longitudinal optical phonon frequency, as well as an increase of the normally forbidden transverse optical mode, are produced. These effects tend to disappear in samples showing a flat relief. The results can be explained if a considerable strain relaxation together with a non-tetragonal distortion of the relaxed material occurred at the surface. Using the information on the surface geometry provided by atomic force microscopy and talystep measurements we have developed a simple elastic model which explains the observations.
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