Noise of hot carriers in the channel of n silicon junction gate field effect transistors

Abstract

At 77 K the noise current spectral density of n type silicon channel junction gate field effect transistors is about 70 times higher than predicted by the theory. This discrepancy is explained by the authors taking into account the noise temperature of hot electrons which is measured for n Si at 77 K vs the electric field. The theory of noise in FETs is subsequently modified and gives results in reasonable agreement with the experiment. This theory can be applied to every one dimensional device.