Abstract
The effects of electron bombardment on the various noise sources in n-type channel and p-type channel junction gate field effect transistors (JFET's) have been investigated in detail. It is shown that generation recombination ( g- r) noise is the most sensitive noise source to electron bombardment. The noise frequency spectra obtained after each bombardment level are shown to be characterized by two distinct time constants, one due to traps in the gate channel depletion region and the other due to traps in the channel.
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