Quantum mechanical calculation of the carrier distribution in the channel of a junction gate field effect transistor

Abstract

physica status solidi (a)Volume 31, Issue 1 p. K37-K40 Short Note Quantum mechanical calculation of the carrier distribution in the channel of a junction gate field effect transistor N. Saleh, N. Saleh Department of Electrical Engineering, Faculty of Engineering, Ain Shams University, Abbassia, CairoSearch for more papers by this authorT. Ezzat, T. Ezzat Department of Electrical Engineering, Faculty of Engineering, Ain Shams University, Abbassia, CairoSearch for more papers by this author N. Saleh, N. Saleh Department of Electrical Engineering, Faculty of Engineering, Ain Shams University, Abbassia, CairoSearch for more papers by this authorT. Ezzat, T. Ezzat Department of Electrical Engineering, Faculty of Engineering, Ain Shams University, Abbassia, CairoSearch for more papers by this author First published: 16 September 1975 https://doi.org/10.1002/pssa.2210310150AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Volume31, Issue116 September 1975Pages K37-K40 RelatedInformation