Abstract
In this paper we propose a new electrostatic discharge protection circuit called MOSFET-triggering silicon controlled rectifiers (MTSCR) for IC protection. The proposed new SCR circuit consists of a trigger controlling and a holding SCR circuit, and the trigger controlling circuit is made of a pMOSFET with its gate connected to the power supply line. The triggering current is due to the drain current passing through the MOSFET. The circuit can protect IC irrespective of the temporal voltage waveform of the overvoltage stress, and the static trigger voltage decreases with decreasing power supply voltage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
