Abstract
An electrostatic discharge (ESD) protection circuit with silicon-controlled-rectifier (SCR) device has been designed without latch-up risk. After fabrication in a 0.13-µm CMOS process, the ESD protection circuit with SCR width of 60µm can sustain 6.2kV human-body-model (HBM) and 475V machine model (MM) ESD tests. The latch-up test shows the immunity against 500-mA triggering current under 3.3V supply voltage.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
