Abstract
We present a microscopic analysis of current fluctuations in a GaAs Schottky-barrier diode under forward-bias conditions. The calculations are performed by employing a one-dimensional Poisson solver coupled self-consistently with an ensemble Monte Carlo simulator. Results support and complement previous findings of M. Trippe, G. Bosman, and A. van der Ziel [IEEE Trans. Microwave Theory Tech. MTT-34, 1183 (1986)] based on phenomenological models. In particular, the coupling between fluctuations in carrier velocity and self-consistent field is found to be essential in determining the noise spectra as a function of applied voltages.
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