Abstract
We present a microscopic analysis of current and voltage fluctuations in GaAs Schottky barrier diodes under forward-bias conditions in the absence of 1/f contributions. Calculations are performed by coupling self-consistently an ensemble Monte Carlo simulator with a one-dimensional Poisson solver. By using current and voltage operation modes we provide the microscopic origin and the spatial location of the noise sources respectively. The coupling between fluctuations in carrier velocity and self-consistent field is found to be essential in determining the noise spectra. Different types of noise (shot, thermal and excess) are exhibited by the device at different voltages. In particular excess noise due to hot carriers and intervalley transfer is detected for the highest voltages.
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