Abstract
A two–dimensional (2D) analytical model with surface potential changes in the delta doped dual material gate with fully depleted silicon on insulator-MOSFET (DMG-DD-SOIFET) is designed to evaluate device characteristics in consideration of interface trap charges (InTCs). The present paper introduced a novel δ-doped in SOIFET to improve device performance. The potential is modeled via two-dimensional Poisson's equations and interface trap charges (InTCs) impact which is verified with numerical simulations using TCAD tool of Silvaco ATLAS. Further, a parametric investigation is carried out to adjust the dimensions of device for a nano-scaled MOS architecture. The performance investigation model and simulation work also involve the calculation of surface potential, drain current and threshold voltage comprising effects of InTCs. It is found that the proposed DMG-DD-SOIFET suggests excellent immunity for short-channel-effects (SCEs) in addition to better device performance for different InTCs conditions.
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