Investigation of interface trap charges and temperature variation in heterostacked-TFET

Abstract

This paper analyzes the reliability issues of the Heterostacked-TFET (HS-TFET) in detail. The investigation of the device reliability is carried out by examining the effect of interface trap charges (ITCs) and the temperature affectability of the HS-TFET on various analog parameters and RF FOMs. The analysis is performed at different interface trap charge densities and polarities. The presence of interface traps at the stackedsource/channel junction and the oxide/silicon interface alters the performance of the device significantly. A positive trap charge density of 3 × 1013 cm−2 degrades the current switching ratio tremendously from an order of 1010–104. The off-state current of the device deteriorates excessively at high temperatures. However, the results establish that the HS-TFET is insusceptible to the acceptor interface trap charge as compared to the donor interface trap charge for temperature variation. A high-k gate dielectric of Aluminum oxide (Al2O3) is considered and compared with Hafnium oxide (HfO2) and it is found that Al2O3 gate oxide has a better immunity to the ITC variation.