Abstract
Microwave cw oscillation at 8 GHz has been obtained in passivated metal-semiconductor diodes. The diodes were fabricated using the beam-lead process of PtSi on epitaxial n-type Si substrates, including a diffused p-type guard ring. The result indicates that (1) the devices behave similarly as abrupt p- n junctions with the same background dopings, (2) the devices are passivated and can be incorporated into integrated circuits, and (3) the devices can handle high power density. Although the efficiency is low for the preliminary devices, this shortcoming is attributed to a non-optimum doping profile.
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