Abstract
We report a study of the interface between fullerene (C 60) doped polycarbonate (PC) blends and n-type Si substrate. C 60 is usually an electron acceptor in interpenetrated networks and an electron transport in photovoltaic cells. We have studied that the guest–host approach to prepare C 60 doped polycarbonate blend. In this article, we report the I–V characteristics of C 60 doped polycarbonate/n-type Si junction and the annealing effect on these characteristics. In this junction, a nanocomposite of organic semiconductor fullerene (C 60), used as the active medium, with an inert polycarbonate matrix was spin coated on n-type Si substrate. We found that the C 60 shows the junction characteristics with n-type Si substrate. The knee voltage and dynamic resistance varies with concentration of C 60 as well as temperature. Ellipsometry studies showed the annealing effect on the refractive index and thickness of C 60 doped polycarbonate blend on n-type Si substrate. The optical micrographs show that fullerene (C 60) is spherical molecule and it is blend in the form of crystallites having size of micron order.
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