Mechanism of Ni Film CVD with a Ni(Ktfaa)2 Precursor on a Silicon Substrate

Abstract

AbstractThe mechanisms of pyrolysis in He and reduction in H2 of the Ni(ktfaa)2 chelate, and nickel film deposition on silicon substrates are discussed. The Ni films produced by CVD with the Ni(ktfaa)2 chelate as a precursor are clustered. At temperatures of 310 °C and higher pyrolysis of the Ni(ktfaa)2 chelate takes place. The hydrogen atmosphere provides a decrease in the reaction temperature to 242 °C. A decrease of the reduction temperature of the Ni(ktfaa)2 chelate on silicon substrates can take place if the OH groups have been adsorbed on the surface. The mechanisms of the chelate decomposition and film deposition define structure, morphology, and adhesion properties of the metallic nickel films. At temperatures higher than 310 °C the carbon‐containing by‐products are incorporated into the deposited Ni phase. The chemical activation of the silicon surface by prior metal atom introduction creates good adhesion and uniformity of nickel films deposited from the Ni(ktfaa)2 precursor.