Abstract
In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10−5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power.
Highlights
Nickel silicide (NiSi) is a promising metal silicide material for the fabricating source/drain (S/D)contacts in electronic devices; the downscaling of a device leads to an uncontrollable increase in the contact resistance in the S/D and gate electrodes [1,2,3]
NiSi, by virtue of its characteristic properties such as its low-temperature processing, low silicon consumption, and low resistivity phase compared to other metal silicides, has been studied intensively by various research groups
Ni films formed at three different radio frequency (RF) powers ofNiSi/p-Si
Summary
Nickel silicide (NiSi) is a promising metal silicide material for the fabricating source/drain (S/D)contacts in electronic devices; the downscaling of a device leads to an uncontrollable increase in the contact resistance in the S/D and gate electrodes [1,2,3]. NiSi, by virtue of its characteristic properties such as its low-temperature processing, low silicon consumption, and low resistivity phase compared to other metal silicides, has been studied intensively by various research groups. Et al reported a study on the controlled diffusion of Ni in the formation of NiSi with different Ni thicknesses for the application of a supercapacitor electrode [4]. Obtaining a low-resistivity NiSi phase still remains a critical issue for high-efficiency electronic devices. In this context, obtaining low-resistance NiSi is essential for high-performance devices. Previous reports have shown that, by controlling the Ni diffusion through Si, the NiSi phase can be selectively obtained
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