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Abstract
AbstractThe mechanisms of pyrolysis in He and reduction in H2 of a Ni(ktfaa)2 chelate and nickel film deposition on copper substrates are discussed. The Ni films produced by CVD with the Ni(ktfaa)2 chelate as a precursor are continuous. Pyrolysis of the Ni(ktfaa)2 chelate takes place above 300 °C. The hydrogen atmosphere allows the reaction temperature to be decreased to 213 °C, but the film deposition rate is low. 300 °C is the optimal temperature for continuous Ni film deposition on Cu substrates. The mechanism of hydrogen interaction with the adsorbed Ni(ktfaa)2 chelate is discussed.
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