Mechanism of Ni Film CVD with a Ni(ktfaa)2 Precursor on a Copper Substrate

Abstract

AbstractThe mechanisms of pyrolysis in He and reduction in H2 of a Ni(ktfaa)2 chelate and nickel film deposition on copper substrates are discussed. The Ni films produced by CVD with the Ni(ktfaa)2 chelate as a precursor are continuous. Pyrolysis of the Ni(ktfaa)2 chelate takes place above 300 °C. The hydrogen atmosphere allows the reaction temperature to be decreased to 213 °C, but the film deposition rate is low. 300 °C is the optimal temperature for continuous Ni film deposition on Cu substrates. The mechanism of hydrogen interaction with the adsorbed Ni(ktfaa)2 chelate is discussed.