Abstract
Low-frequency noise characteristics of 0.1 μm Si 1− x Ge x channel pMOSFETs were studied by numerical simulations in the framework of the carrier number fluctuation model as well as the correlated fluctuation in the mobility model. Simulation results predict that Si 1− x Ge x channel pMOSFETs could offer improved low-frequency noise performance as compared to the conventional bulk Si devices. This improvement in Si 1− x Ge x channel pMOSFETs could be attributed to less effective oxide trap density for noise generation due to the increasing separation of quasi-Fermi level and valence band edge at Si–SiO 2 interface by Ge-induced band offset.
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