Abstract
Low frequency noise measurements were performed on n- and p-channel MOSFETs with TaSiN and TiN metal gates, respectively, deposited on ALD HfO 2 gate dielectric. Lower normalized current noise power spectral density is reported for these devices in comparison to poly-Si/HfO 2 devices and that yielded one order lower magnitude for extracted average effective dielectric trap density. In addition, the noise levels in PMOS devices were found to be higher than NMOSFETs and the dielectric trap distribution less dense in the upper mid-gap than the lower mid-gap region. The screened carrier scattering coefficient extracted from the noise measurements was approximately the same for metal and poly-Si high- k stacks but higher than that for the poly-Si SiO 2 system, implying higher Coulomb scattering effects. It is believed that the elimination of dopant penetration seen in poly-Si system and low thermal budgets for metal gate deposition helped lower the noise magnitude and yielded better mobility and effective trap density values.
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