Abstract
We describe studies of intermixing in GaAsSb∕AlSb quantum wells with 18.8% and 31% arsenic, grown on GaSb substrates. Samples were implanted with a 1×1013cm−2 dose of 330keV boron ions and annealed. The band gap for the samples was determined from photoluminescence. The maximum blueshift of the band gap was 141nm (86meV) for the quantum wells with 18.8% arsenic and 198nm (124meV) for the quantum wells with 31% arsenic. The blueshifts are attributed to interdiffusion of both group-III and group-V constituents. Photoluminescence strength generally increased with annealing temperature.
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