Abstract
The basic threshold characteristics of a semiconductor IR laser based on a heterostructure with deep InAs0.84Sb0.16/AlSb quantum wells (QWs) have been studied. The threshold carrier densities and threshold current densities of radiative and Auger recombination (AR) were found. It is shown that at certain QW parameters the AR rate is strongly (by several orders of magnitude) suppressed. In this case, the emission wavelength falls within the interval 2–3.5 μm, which corresponds to the mid-IR spectral range. The internal quantum efficiency of emission at the lasing threshold was calculated and its dependence on the QW width within the AR suppression range was demonstrated. The laser structure was optimized with respect to the number of QWs.
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