The Landé‐ g factor in heterostructures

Abstract

We have studied the behavior of the Shubnikov-de Haas oscillations in magnetoresistance under applied magnetic fields with an arbitrary orientation. Different procedures to measure the Landé-g factor have been used in the literature. We propose four unambiguous methods and formulas for the evaluation of this quantity. The Landé-g factor obtained using these formulas compares within the 5% with the reported results of Brosig et al. [1] in InAs – AlSb quantum wells, Bompadre et al. [2] for Bismuth crystals, Kobayashi et al. [3] measuring magnetoresistance as a function of the gate Voltage and F. Fang et al. [4] for InAs – GaSb heterostructure. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)