(Invited) Interface Treatment Related Defects During Ge Gate Stack Formation

Abstract

The impact of different interface treatments on defect generation during gate stack formation on the p-type germanium is reported in this paper. In most cases 1nm Al2O3 was used to limit the germanium diffusion into the high-k layer. Defects were characterized by conductance method and deep level transient spectroscopy. A signature of slow traps (~1ms) originating from the bulk or interface depending on the type of GeOx formation was observed. Furthermore, the defect formation due to different types interfacial layer formation is also investigated when the gate stacks were subjected to slot plane antenna plasma oxidation. It was observed that a stable GeOx formation leads to a reduction in defect formation at the interface.