Abstract
For the past years, high power SiC MOSFET module has been widely applied in industrial drive, power transmission application and high power energy conversion for its superior switching performances. The performance of a commercial available type of three-phase bridge package is investigated to figure out the impact of stray inductance. The presence of parasitics causes undesired overshoot and oscillations in the device and increase switching loss. These detrimental effects are required to be analyzed in detail to develop an efficient SiC MOSFET. So the parasitics of module are investigated in the paper. An electromagnetic model is built by ANSYS Q3D Extractor to calculate the parasitic inductance and resistance of the module. All the parasitic parameters extracted from 3D structures can be exported to circuitry simulation software Ansys Simplorer to get the circuitry results, which demonstrates the relation between parasitics and the circuitry performance. Related experiments are also performed to verify the simulation results. In summary, this work presents that parasitic inductances indeed affect the switching responses of SiC MOSFET. These effects are much more detrimental due to very high switching speed. This paper reports the electromagnetic modeling method of the effects of parasitic inductance on the switching performance of the module.
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