Investigation of strontium tantalate thin films for high-k gate dielectric applications

Abstract

Strontium tantalate (STO) films were grown by liquid-delivery (LD) metalorganic chemical vapor deposition (MOCVD) using Sr[Ta(OEt) 5(OC 2H 4OMe)] 2 as precursor. The deposition of the films was investigated in dependence on process conditions, such as substrate temperature, pressure, and concentration of the precursor. The growth rate varied from 4 to 300 nm/h and the highest rates were observed at the higher process temperature, pressure, and concentration of the precursor. The films were annealed at temperatures ranging from 600 to 1000 °C. Transmission electron microscopy (TEM), X-ray diffraction (XRD), and ellipsometry indicated that the as-deposited and the annealed films were uniform and amorphous and a thin (>2 nm) SiO 2 interlayer was found. Crystallization took place at temperatures of about 1000 °C. Annealing at moderate temperatures was found to improve the electrical characteristics despite different film thickness (effective dielectric constant up to 40, the leakage current up to 6×10 −8 A/cm 2, and lowest midgap density value of 8×10 10 eV −1 cm −2) and did not change the uniformity of the STO films, while annealing at higher temperatures (∼1000 °C) created voids in the film and enhanced the SiO 2 interlayer thickness, which made the electrical properties worse. Thus, annealing temperatures of about 800 °C resulted in an optimum of the electrical properties of the STO films for gate dielectric applications.