Abstract
The strontium tantalate (STaO) films were deposited on silicon substrates by liquid delivery (LD) metalorganic chemical vapor deposition (MOCVD) using Sr[Ta(OEt)5(OC2H4OMe)]2 as a single strontium-tantalum precursor. The deposition of the films was investigated in dependence on process conditions, such as substrate temperature, pressure, and concentration of the precursor. The growth rate varied from 4 to 300 nm/h and the highest rates were observed at the higher values of process temperature, pressure, and concentration of the precursor. As- deposited STaO films were completely amorphous. Crystallization occurs only after annealing at higher temperatures (~1000{degree sign}C). Additionally, annealing reduced the interface state density and the leakage current but a SiO2 interlayer grew too.
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