Abstract
Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 250 nm thick BiFeO3 (BFO) ferroelectric film and 150 nm thick TiO2 layer on silicon substrate have been fabricated and characterized. TiO2 was deposited on Si substrate by liquid delivery metal-organic chemical vapor deposition (LD-MOCVD) process. The microstructure and the electrical properties of the Pt/BFO/TiO2/Si capacitors were studied. TiO2 demonstrates excellent insulating properties on Si substrate. The MFIS structure showed clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of BFO. The maximum memory window is 3.51 V. When sweeping voltages decreased from ±14 to ±6 V, the memory window width decreased from 3.51 to 1.11 V. The leakage current of the film was of the order of 10−8 A/cm2 at an applied voltage of 4 V.
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