Investigation of a Double Gate Work-function Engineered Ge-Source Vertical TFET

Abstract

In this manuscript, small bandgap material Germanium-based work-function engineered double gate Vertical TFET device is analyzed through the ATLAS TCAD simulator. Dual-tunnel mechanism i.e., point tunneling and line tunneling takes place in this device as the gate overlaps the source as well as the channel. Vertical or line tunneling increases the ON-current, but also trade-offs the OFF-current. Hence work function engineering is utilized to regulate the OFF-current of the device. Further, this dual material gate work-function engineering aids to improve the ON-current, average subthreshold swing, point subthreshold swing, and current ratio significantly. The obtained performance parameters of the DGWF-VTFET device make it a favorable candidate for low power applications.