Abstract
A method has been developed which allows the extraction of the density of electrically active defects in the bird's beak region of LOCOS isolation of a MOS structure. The measurements were performed on a special structure with enhanced edge effects using quasi-static techniques. The experimental results are compared with simulations using a model which allows for the inclusion of surface states in the bird's beak region. It is found that the best fit is obtained for a uniform energy distribution with N ss = 1E12 cm −2 eV −1, while the states are situated in the bird's beak region up to 1800 Å from the gate oxide edge.
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