Abstract
InP/In 0.53Ga 0.47As/InP double heterojunction bipolar transistors were grown on GaAs substrates. A 92 GHz power-gain cutoff frequency f max and a 165 GHz current-gain cutoff frequency f τ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BV CEO was 5 V while the DC current-gain β was 27. In order to minimize the transistor operating junction temperature, high-thermal-conductivity InP metamorphic buffer layers were employed.
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