InGaAs/InAlGaAs hot-electron transistors with current gain of 15

Abstract

Hot-electron transistors (HETs) using an InGaAs/InAlGaAs heterostructure have been fabricated for the first time. The base layer thickness (base width) was 1000 Å,500 Å or 250 Å. The common-emitter current gain was measured at about 15 at 77 K for the 250 Å base HETs, which is, to the authors' knowledge, the highest value ever reported.