Abstract
A hot electron transistor (HET) which has a strained GaInAs base and a graded AlGaAs collector barrier was grown on a GaAs substrate by metalorganic chemical vapour deposition. In this device, the difference in energy levels between the L-band minima of the base and the top of the collector barrier is wider than that in GaAs-base HETs, which results in a common emitter current gain β (collector current/base current) as high as 30.
Full Text
Sign-in/Register to access full text options
Published version (Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have