Abstract
Using AlGaAs GaAs hot electron transistors (HETs) grown by MOCVD (metalorganic chemical vapor deposition), we have studied the injected hot electron transport during traversal in the doped GaAs base-layer. An anomalous peak and shoulder in the transfer ratio α (=Ic/Ie) vs. emitter-voltage relation were seen in a HET having a lightly doped base, and they were attributed to the onset of the intervalley scattering from Γ to L and from Γ to X band minima, respectively. With increasing electron doping density in the base layer, α decreased drastically and structures ascribed to intervalley scatterings became obscured. In addition, α depended inverse-exponentially on base thickness. It can be concluded that a strong scattering caused by conduction electrons and/or impurities is involved in the transfer process. Current gain β under the common-emitter configuration exceeded 5 and when strained GaInAs was incorporated in the base layer, β exceeded 10, showing the potentially high performance of this new material system.
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