Co-integration of resonant-tunneling and single-barrier hot-electron transistors operating at 300 K

Abstract

We have co-integrated a tunneling hot-electron transfer amplifier (THETA) and a novel resonant-tunneling hot-electron transfer amplifier (RTHETA) within a single epitaxial growth. At room temperature, the THETA exhibits a peak common-emitter current gain of greater than 6. The RTHETA exhibits similar common-emitter current gain along with negative transconductance characteristics associated with the resonant-tunneling effect. In contrast to the resonant-tunneling hot-electron transistor (RHET), the RTHETA exhibits current gain both before and after the resonant peak voltage. From on-wafer S-parameter measurements, the current-gain cut-off frequency (f/sub T/) and the maximum frequency of oscillation (f/sub max/) for both transistors are approximately 20 GHz and 9 GHz, respectively. >