MOCVD-grown AlGaAs/GaAs hot-electron transistor with a base width of 30 nm

Abstract

An AIGaAs/GaAs hot-electron transistor (HET) with a base width of 30 nm was successfully fabricated by MOCVD. The common-emitter current gain increased gradually with base-collector voltage, and reached a level of 1.6 at 77 K and 2.0 at 4.2 K. This current gain is the highest and this base width is the thinnest among those reported so far on the AIGaAs/GaAs HET.