Abstract
The influence of surface orientation and surface structure on indium segregation and alloy properties were systematically studied in InGaAs GaAs quantum well structures grown by molecular beam epitaxy. (100), (311)A and (311)B surface orientations and different approaches in the growth interruption at the interfaces were used in this investigation. The segregation process and alloy parameters were obtained by photoluminescence and RHEED measurements. We find significant differences in the optical properties and growth kinetic for the three orientations. Using growth interruption we were able to change the surface structure and reduce the segregation process for all orientations.
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