Abstract
We have performed a comprehensive study of the effects of surface structure and orientation on indium segregation process and alloy properties in InGaAs GaAs quantum well. The (100), (311)A and (311)B surface orientations and different approaches in the growth interruption at the interfaces were used in this investigation. We find significant differences in the optical properties and growth kinetics for the three orientations. Our results show smaller indium surface segregation and alloy disorder in the (311)A orientations than in the (311)B and (100) orientations. Using growth interruptions we were able to change the surface structure and reduce the segregation process for all orientations.
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