Influence of dynamical interactions between density and mobility of carriers in the channel on [formula omitted] noise of MOS transistors below saturation—I. Mechanisms

Abstract

The influence of drain voltage V D , gate voltage V G and of the chip geometry on 1 ƒ noise of MOS transistors below saturation in strong inversion is analyzed, with the assumption that the carrier mobility along the channel is non-constant. Taking into consideration the effect of dynamical interactions between the carrier density and mobility it is shown, in part I of this paper, that the frequency spectrum of mean-square fluctuations in conductivity dS σ(ƒ) increases vs V D , in relation to the case when the mobility along the channel μ( y) is assumed as constant. This, in particular, concerns the smaller MOS transistors operating near the region of saturation.