Abstract
At high frequencies the gate admittance of the MOSFET contains a conductive component because of the capacitive coupling of the gate electrode to the channel. The thermal noise fluctuations, originating in the channel, induce a gate current outwards from the gate electrode. Based on a proved two-region model for the drain current noise of a sub-micron MOSFET, it is shown that the calculated gate-noise current increases significantly, compared to that predicted by a classical model, valid for long channel devices.
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