Hot-Carrier Reliability of Gate-All-Around MOSFET for RF/Microwave Applications

Abstract

In this paper, degrading effects of hot-carrier-damage-induced interface localized charges on the RF/microwave characteristics of the cylindrical gate-all-around (GAA) MOSFET are investigated, and asymmetric gate stack architecture is proposed to suppress the impact of localized charges on the RF performance. RF/microwave figures of merit such as transconductance, parasitic capacitances, cutoff frequency, maximum frequency of operation, current gain, and power gain are studied to estimate performance degradation due to localized charges present at the SI-SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface of GAA MOSFET. Gate stack GAA MOSFET has been already demonstrated for the suppression of dc performance degradation caused by hot-carrier induced localized charges, but it has been observed in this paper that, although gate stack architecture suppress the degradation due to localized charges, it also leads to higher parasitic capacitance and low cutoff frequency, thus not suitable for RF/microwave applications. In this paper, asymmetric gate stack architecture is proposed in order to have immunity against degrading effects of localized charges on RF performance.