Abstract
We investigate the dynamics of non-thermal carrier distributions in undoped and modulation doped GaAs Quantum Well Structures (layer thickness ≈ 100 Å) with near bandgap-resonant intense femtosecond light pulses. We are able to study selectively the carrier-carrier scattering process up to very high densities and we carry out the first optical investigation of non-thermal carrier generation in the presence of a thermalized Fermi-sea of electrons. In undoped quantum wells we find a reduction of the thermalization time from about 100 fs to about 30 fs as the photocarrier density increases from N ch ≈ 2 × 10 10 cm −2 to ≈ 10 12 cm −2. The thermalization time is found to be sensitive to background doping with excess electrons in modulation doped samples.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
