Electronic Raman scattering on modulation doped GaAs quantum wells: Conduction band structure and collective effects

Abstract

We report on a detailed analysis of electronic Raman scattering results in modulation doped single quantum wells. We illustrate thereby the great power of this technique to get a detailed characterization of the electron density distribution and the band structure in doped heterostructures. We report in particular on a recent observation, for first time directly by spectroscopy, of the spin splitting of the conduction band of GaAs due to the lack of inversion symmetry.