Abstract
This paper describes melt growth of ZnSe crystals by a modified Bridgman method under argon pressure. Stoichiometric deviations of the ZnSe melt are controlled by Zn partial pressure. A crucible and a Zn reservoir are placed in a pyrolitic boron nitride (pBN) vessel, which is covered with a deep, closed pBN cap to minimize loss of Zn. A definite Zn partial pressure over the melt during growth is maintained by controlling the temperature of the Zn reservoir. The melt composition is analyzed as a function of the temperature of the Zn reservoir. The stoichiometric melt is obtained under Zn partial pressure. Low-resistivity n-type crystals of 0.2-0.9 Ω cm are grown from Zn-rich melts in a one-step process.
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