Abstract
Zinc selenide crystals are grown from the melt by a modified Bridgman method under argon pressure. The electrical and optical properties of the as-grown crystals are measured as a function of the temperature of a Zn reservoir which produces a vapor of a specific Zn partial pressure. Low-resistivity n-type crystals of 0.2 to 2 Ω·cm are grown at the temperature of the Zn reservoir above 960°C. Electron Hall mobility of the crystals decreases with increasing temperature of the Zn reservoir during growth. A mobility value of 550 cm2/V·s is obtained at room temperature (290 K). The extra Zn partial pressure enhances a bound-exciton line and suppresses deep-level emission bands around 500 and 600 nm in photoluminescence spectra at 10 K.
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