Abstract
This paper describes the melt growth of ZnSe crystals by a modified Bridgman method under argon pressure. A definite Zn partial pressure over the melt is maintained by controlling the temperature of a Zn zeservoir. Electrical properties of as-grown crystals depend on the temperature of the reservoir. Low-resistivity n-type crystals are obtained when the temperature of the reservoir is kept above 1040°C during growth. The resistivity of the crystals is 0.2 to 5 Ω·cm and the Hall mobility is 380 to 500 cm2/V ·s at room temperature (290±5 K). The temperature of the Zn reservoir during the cooling process after solidification also affects the electrical properties.
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