Dependence of lattice parameter of melt-grown ZnSe on Zn partial pressure during in situ annealing

Abstract

Lattice parameters of annealed ZnSe crystals have been measured by the Bond method. The annealing was carried out at 1000°C under a definite Zn partial pressure maintained by heating a Zn reservoir after growth from the melt under Zn partial pressure. The lattice parameter, a, depends on the Zn reservoir temperature during annealing, T Zn(A); a=0.566898±0.000005 nm at T Zn(A) of 450–600°C, a=0.566910±0.000005 nm at T Zn(A) of 750°C and a=0.566913±0.000003 nm at T Zn(A) of 900°C. The dependence of lattice parameter on Zn partial pressure is discussed.